Developed using a charge compensation principle and proprietary process technology, these Ultra Junction MOSFETs provide the best-in-class Figure of Merit (on-resistance times gate charge), which translates into lowest conduction and switching losses. They exhibit the lowest on-state resistances in the industry.
\nWith low reverse recovery charge and time, the body diodes are capable of removing all the leftover energies during high-speed switching to avoid device failure and achieve high efficiency.
\nMoreover, these new devices are avalanche capable and exhibit a superior dv\/dt performance as well. They are robust against device failure caused by voltage spikes and accidental turn-on of parasitic bipolar transistors inherent in the MOSFET structure. As such these rugged devices require fewer snubbers and can be used in both hard and soft switching power converters.<\/p>\n","protected":false},"excerpt":{"rendered":"
Lowest on-resistance RDS(ON) and gate charge Qg. Fast soft recovery body diode. dv\/dt ruggedness. International standard packages. Battery chargers for light electric vehicles. Synchronous rectification in switching power supplies. Dc-dc converters. Uninterruptible power supplies. Electric forklifts. Class-D audio amplifiers. Telecom systems. <\/p>\n","protected":false},"featured_media":40292,"template":"","meta":[],"company":[],"product_brand":[5482],"product_cat":[5050,5044],"product_tag":[],"class_list":{"0":"post-40294","1":"product","2":"type-product","3":"status-publish","4":"has-post-thumbnail","6":"product_brand-littelfuse","7":"product_cat-mosfets-si-sic","8":"product_cat-littelfuse-semiconductors","10":"first","11":"instock","12":"shipping-taxable","13":"product-type-simple"},"yoast_head":"\n