The high-performance ceramic substrate based isolated package offers inherent isolation, higher thermal conductivity and reduces thermal resistance junction-to-heatsink while remaining industry standard footprint compatible. These SiC MOSFETs are engineered to reduce the on-state resistance, to minimize the power losses, while maintaining excellent switching performance. This makes them ideal for high-frequency, and high-efficiency power-management applications like DC\/DC converter, switch mode power supplies, induction heating and motor drives.<\/p>\n","protected":false},"excerpt":{"rendered":"
1200V with low RDS(on) = 18 m\u2126. SiC MOSFET Technology with 0\/+15..+18 V gate drive. High-performance ceramic based isolated package. Low input capacitance 4522 pF. Industry standard package outline. Low conduction losses. Low gate drive power requirements. Improved overall thermal resistance RthJH and power handling capability. Low thermal management requirements. Enhanced safety and suitability for applications requiring stringent isolation standards. Low switching losses. Compatible with industry standard TO-247-3L package. Solar inverters. DC\/DC converters. EV charging infrastructures. Motor drives. Induction heating. <\/p>\n","protected":false},"featured_media":41537,"template":"","meta":[],"company":[],"product_brand":[5482],"product_cat":[5050,5044],"product_tag":[],"class_list":["post-41539","product","type-product","status-publish","has-post-thumbnail","product_brand-littelfuse","product_cat-mosfets-si-sic","product_cat-littelfuse-semiconductors","first","instock","shipping-taxable","product-type-simple"],"yoast_head":"\n