Utilizing XPT™ thin-wafer technology and 4th generation (GenX4™) Trench IGBT process, these up to 1200V devices helps to reduced gate driver requirements and conduction losses. It features reduced thermal resistance, low losses, high current densities and low gate charge requirement. A positive collector-to-emitter voltage temperature coefficient enables designers to use multiple devices in parallel. Advantages:
Ideal for high power density and high inrush currents, low loss applications
Hard-switching capable
Easy paralleling of devices
Reduced gate driver requirements
Ease of replacement and availability of isolation package
Low gate drive requirements