Polar2™ HiPerFET™ versions are offered with drain current ratings of 24, 42, 52, 74, 94 and 120 Amperes. These high-performance versions retain all the features and advantages of the PolarP2™ Standard versions, with the added benefit of a fast intrinsic rectifier for increased turn-off dV/dt immunity and low reverse recovery speeds (trr <=250ns). Furthermore, these devices eliminate the need for discrete anti-parallel high voltage diodes used in conventional designs, thereby reducing part count, simplifying PCB layouts, reducing overall losses and improving power density. The featured fast intrinsic body diode properties of these HiPerFET™ versions play a pivotal role in overall device performance by providing faster transient response, increased power efficiency, improved ruggedness, and higher operating frequencies. Advantages: Simple drive requirements Enables high speed switching Reduced component count & circuit complexity Cooler device operation
IXFN94N50P2
Our proven Technology
Low RDS(on) and Qg. Low thermal resistance RthJC. High power dissipation. Avalanche Rated. SMPS/RMPS, UPS, PFC, Dc-dc converters, laser drivers, battery chargers, motor drives, solar inverters, lamp ballasts, robotic and servo control.
Specifications
| Gewicht | 0.03 kg |
|---|---|
| Weight (g) | 30 |
| Fast Intrinsic Rectifier | Dynamic dv/dt ratings |
| Package Type | SOT-227 |
| Business Group | POWER SEMI |
| Product Line | POWER MOSFET DISCRETE |
| Cont. Drain Curr. 25C (A) | 68 |
| Drain Source (V) | 500 |
| Gate Charge (nC) | 220 |
| Input Capacitance CISS (pF) | 13700 |
| Max On-Resistance 25C (Ohm) | 0.055 |
| Max Reverse Recovery (ns) | 250 |
| Power Dissipation (W) | 780 |
| Rth (j-c) (K/W) | 0.16 |
| Voltage (V) | 500 |
| Current (A) | 68 |
Features and benefits
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Download file: IXFN94N50P2_datasheet