IXFP4N85XM

Name: IXFP4N85XM
SKU: IXFP4N85XM
Availability: InStock

Our proven Technology

Ultra low on-resistance R_DS(ON) and gate charge Q_g. Fast body diode. dv/dt ruggedness. Low package inductance. International standard packages. Industrial switched-mode and resonant-mode power supplies. Electric vehicle battery chargers. Dc-dc converters. Renewable-energy inverters. Power Factor Correction (PFC) circuits. Robotics and servo control.

SKU: IXFP4N85XMCategories: MOSFETs (Si/SiC), Littelfuse vermogenshalfgeleiders

Specifications

Gewicht	0.0025 kg
Weight (g)	2.5
Fast Intrinsic Rectifier	Avalanche rated
AC and DC Motor Drives	Ac and dc Motor Drives
Package Type	TO-220FP
Business Group	POWER SEMI
Product Line	SUPER JUNCTION
Cont. Drain Curr. 25C (A)	3.5
Drain Source (V)	850
Gate Charge (nC)	7
Input Capacitance CISS (pF)	247
Max On-Resistance 25C (Ohm)	2.5
Max Reverse Recovery (ns)
Power Dissipation (W)	35
Rth (j-c) (K/W)	3.57
Typ Rev Recov Time(ns)	170
Voltage (V)	850
Current (A)	3.5

Features and benefits

Ultra-Junction X-Class Power MOSFETs with fast body diodes are rugged devices that display the lowest on-state resistances in the industry, enabling very high power density in high-voltage power conversion applications. Developed using the charge compensation principle and proprietary process technology, these devices exhibit low gate charges and superior dv/dt performance. In addition, thanks to the fast soft-recovery body diode, these Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI).
Advantages:

Higher efficiency
High power density
Easy to mount
Space savings

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Download file: IXFP4N85XM_datasheet