Silicon chip on Direct-Copper-Bond substrate. 3rd generation CoolMOS™(1) power MOSFET. Enhanced total power density. Switch mode power supplies. Uninterruptible power supplies. Welding. Inductive heating.
| Gewicht | 0.03 kg |
|---|---|
| Weight (g) | 30 |
| Fast Intrinsic Rectifier | Low thermal resistance |
| AC and DC Motor Drives | Power factor correction (PFC) |
| Package Type | SOT-227B (minibloc) |
| Business Group | POWER SEMI |
| Product Line | SUPER JUNCTION |
| Cont. Drain Curr. 25C (A) | 75 |
| Drain Source (V) | 600 |
| Gate Charge (nC) | 500 |
| Input Capacitance CISS (pF) | 13600 |
| Isolated Tab RMS (V) | 2500 |
| Max On-Resistance 25C (Ohm) | 0.036 |
| Max Reverse Recovery (ns) | |
| Power Dissipation (W) | 560 |
| Rth (j-c) (K/W) | 0.22 |
| Typ Rev Recov Time(ns) | 580 |
| Voltage (V) | 600 |
| Current (A) | 75 |
These Power MOSFETs based on Super Junction technology feature the lowest RDS(on) in 600V-800V class MOSFETs. Internal DCB isolation simplifies assembly and reduces thermal resistance from junction to heat sink. These devices are Avalanche rated, thereby guaranteeing rugged operation.
Advantages:
Easy assembly
Space savings
High power density
(1) CoolMOS™ is a trademark of Infineon Technologies AG.
