The new 200V X4-Class Ultra Junction MOSFETs are available with 120A nominal current rating in TO-247 package. These Power MOSFETs feature significantly reduced channel resistance RDS(on) leading to an improvement in the Figure of Merit FOM RDS(on) x RthJC as compared to its predecessor X3-Class. These benefits enable designers to achieve higher efficiency using simplified thermal design.
IXTH120N20X4
Our proven Technology
The lowest on-state resistance in TO-220 RDS(ON) = 9.5mΩ. Low thermal resistance RthJC = 0.36 K/W. Low gate charge Qg = 108nC. Low static losses. Simplified thermal design. Low gate drive power demand.
Specifications
| Fast Intrinsic Rectifier | 175°C operating junction temperature |
|---|---|
| Package Type | TO-247 |
| Business Group | POWER SEMI |
| Product Line | SUPER JUNCTION |
| Cont. Drain Curr. 25C (A) | 120 |
| Drain Source (V) | 200 |
| Gate Charge (nC) | 108 |
| Input Capacitance CISS (pF) | 6100 |
| Max On-Resistance 25C (Ohm) | 0.0095 |
| Max Op Junc Temp (°C) | 175 |
| Max Reverse Recovery (ns) | |
| Power Dissipation (W) | 417 |
| Rev Trans Capacit. CRSS (pF) | 1.8 |
| Rth (j-c) (K/W) | 0.36 |
| Typ Rev Recov Time(ns) | 190 |
| Voltage (V) | 200 |
| Current (A) | 120 |
Features and benefits
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Download file: IXTH120N20X4_datasheet