International standard packages. Fast switching times. Avalanche rated. Ultra-low RDS(on). Capacitor discharge circuits. High voltage power supplies. Level shifting. Solid State Relays. Triggers.
| Gewicht | 0.004 kg |
|---|---|
| Weight (g) | 4 |
| Fast Intrinsic Rectifier | Rugged Polysilicon Gate Cell structure |
| AC and DC Motor Drives | Pulse circuits |
| Package Type | TO-268S |
| Business Group | POWER SEMI |
| Product Line | POWER MOSFET DISCRETE |
| Cont. Drain Curr. 25C (A) | 6 |
| Drain Source (V) | 1500 |
| Gate Charge (nC) | 67 |
| Input Capacitance CISS (pF) | 2230 |
| Max On-Resistance 25C (Ohm) | 3.5 |
| Max Reverse Recovery (ns) | |
| Power Dissipation (W) | 540 |
| Rth (j-c) (K/W) | 0.23 |
| Typ Rev Recov Time(ns) | 1500 |
| Voltage (V) | 1500 |
| Current (A) | 6 |
The High Voltage series of N-Channel Standard MOSFETs are suitable for a wide variety of power switching systems, including high-voltage power supplies, capacitor discharge circuits, pulse circuits, and current regulators.
Advantages:
Easy to mount
Space savings
High power density
