Littelfuse brings you a world-leading class of ultra fast and ultra soft recovery diode available from -1.7kV to 6.5kV in current ratings from 270A to 4200A. These diodes incorporate a unique manufacturing process and lifetime control to offer a class leading trade-off between conduction and switching losses. The wide safe operating area (SOA) makes them ideal as freewheeling diodes for snubberless IGBT and IGCT applications or any application which requires a fast, low loss diode. For example, traction, medium voltage drives, induction heating and pulsed power applications.
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Littelfuse IXYS Discrete Diode E1780TG65E
Our proven Technology
Specifications
| Package Type | W125 |
|---|---|
| Packaging | Tray |
| I_TAV at T_K 55°C (A) | 1780 |
| I2t Diode (A2/s) | 3.29 x 10⁶ |
| Max Op Junc Temp (°C) | 140 |
| VRRM Diode (V) | 6500 |
| IRRM (A) | 1750 |
| IFSM 10ms Diode (A) | 25600 |
| Reverse Recovery Charge (µC) | 3500 |
| Slope Resistance (mOhms) | 0.983 |
| Rth(j-h) 180°C Sine (K/W) | 0.0077 |
| Threshold Voltage (V) | 2.021 |
| Trr (µs) | 1.22 |
| Voltage (V) | 6500 |
| Current (A) | 1780 |
Features and benefits
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The datasheet is available below. We will respond to your request promptly.
Download file: Datasheet-E1780TG65E