Hitachi Energy offers a broad portfolio of asymmetric GTOs with proven field reliability in various traction and industrial applications. Asymmetric GTOs are divided in two categories: Fine pattern and standard. Fine pattern GTOs with buffer layer have exceptionally low on-state and dynamic losses and are optimized for fast switching.
GTO 5SGA 06D4502
Our proven Technology
One might be assuming that the rapid advance of the IGBT would spell an equally rapid end to the GTO era. The demand for these devices, however, is still strong today.
Specifications
| Merk | Hitachi Energy |
|---|---|
| GTO-type | Asymmetrische GTO |
| VDRM (V) | 4500 |
| VDC (V) | 2800 |
| VRRM (V) | 17 |
| ITGQM (A) | 600 |
| bij Cs (µF) | 1 |
| ITAVM (A) | 210 |
| TC (°C) | 85 |
| ITSM 10 ms (kA) | 3 |
| VT ITGQM TVJM (V) | 4 |
| VT0 TVJM (V) | 1.9 |
| rT (mΩ) | 3.5 |
| TVJM (°C) | 125 |
| RthJC (K/kW) | 50 |
| RthCH (K/kW) | 8 |
| Fm (kN) | 11 |
| Behuizing | Zie datasheet |
| Spanning (V) | 4500 |
| Stroomsterkte (A) | 600 |
Features and benefits
More information and download request
For more information, access to the product datasheet, or to get in touch with one of our specialists. Please fill out the form below.
Thank you for your request
The datasheet is available below. We will respond to your request promptly.
Download file: Hitachi Energy Power Semiconductors 2024