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Half-Bridge Drvr 200V 1.4A Soic(N)-8

Our proven Technology

Optically isolated input-to-output. Can be configured for ac and dc switching. 5 mA control current. No EMI or RFI generation. Machine-insertable and wave-solderable. Surface mount version supplied on a tape and reel available. Replacement of discrete components. Solid state reliability. VDE compatible. Industry standard pinout. Can drive a broad range of MOSFETs and IGBTs. Operates from standard supply voltage levels. Can directly be controlled from most microcontrollers. Minimum cross conduction minimizes circuit losses. DC-DC Converters. AC-DC Inverters. Motor Controllers. Class-D Power Amplifiers

SKU: IXD2012NTRCategories: Gate-drivers

Specifications

Gewicht 0.000156 kg
Weight (g)

0.156

Product line

POWER IC

IC package type

8-pin SOIC

Maximum offset voltage (V)

200

Typ. src peak drive curr.

1.9A

Typ. sink peak drive curr.

2.3A

Inputs

HIN / LIN

Deadtime (ns)

None

Propagation delay tON (ns)

180

Propagation delay tOFF (ns)

220

Rise time tr (ns)

30

Fall time tf (ns)

20

Voltage (V)

200

Features and benefits

The IXD2012NTR is a 200 V, high-speed gate driver with high-side and low-side outputs, designed to drive N-channel MOSFETs and IGBTs in a half-bridge configuration. The IXD2012NTR logic inputs are compatible with standard TTL and CMOS levels down to 3.3 V, to interface easily with controlling devices. The driver outputs feature high pulse current buffers that are designed for minimum driver cross conduction.

More information and download request

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Download file: IXD2012NTR_datasheet

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