BiMOSFETs are devices, which have combined strengths of MOSFETs and IGBTs. Non-epitaxial construction and new fabrication processes were used in making BiMOSFETs a great success.These high voltage devices are ideal for parallel operation due to the positive voltage temperature coefficient of both of its saturation voltage, and the forward voltage drop of its intrinsic diode. Furthermore, this “free” intrinsic body diode serves as a protection diode, providing an alternative path for the inductive load current during device turn-off, preventing high Ldi/dt voltage transients from inflicting damage to the device.
IXBT10N170
Our proven Technology
Disc IGBT BiMosfet-High Volt TO-268AA. High blocking voltage. High power density. High current handling capability. Low conduction losses. MOS gate turn on for drive simplicity. International standard and proprietary ISOPLUSTM packages. Eliminates multiple series-parallel lower voltage, lower current rated devices. Simpler system design. Improved reliability. Reduced component count. Reduced system cost. Radar transmitter power supplies. Radar pulse modulators. Capacitor discharge circuits. High voltage power supplies. AC switches. HV circuit breakers. Pulser circuits. High voltage test equipment. Laser & X-ray generators
Specifications
| Gewicht | 0.004 kg |
|---|---|
| Weight (g) | 4 |
| Voltage (V) | 3.8 |
| Current (A) | 20 |
| Product line | IGBT DISCRETE |
| Package Type | TO-268S |
| Current at 25C (A) | |
| Current at 90C (A) | |
| Emitter Saturation (V) | |
| Driving Voltages (V) | |
| Fall Time Induct. Load (ns) | |
| Th. Res. junct-case (kW) | |
| VCES Collector-Emitter (V) |
Features and benefits
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Download file: IXBT10N170_datasheet