GenX3™ IGBTs are PT (Punch Through) manufactured using our robust HDMOS IGBT process.
300V GenX3™ IGBTs offer switching capabilities up to 150 kHz, with currents ranging from 42A to 120A. The combination of high switching speeds and low conduction losses offers power designers a new high value option for switching applications. These UIS rated devices are rugged and robust making them comparable to most rugged power MOSFETs.
600V GenX3™ are optimized for high current applications requiring soft-switching frequencies upwards of 200 kHz and hard-switching frequencies of 40 kHz. These devices utilize our proven Punch-Through (PT) technology providing higher surge current capabilities, lower saturation voltage, and lower energy losses offering designers a new viable option for switching applications at the 600V range.
1200V GenX3™ utilize our advanced Punch-Through (PT) technology to provide lower saturation voltages, lower switching losses, and higher surge current capabilities. This growing product line aimed at the high voltage power conversion market.
To accommodate optimum part selection, designers have a choice in selecting between three sub-classes denoted A3, B3, and C3. These classifications offer greater system design flexibility and the opportunity for designers to reach the best compromise between critical requirements such as switching frequency, efficiency, and cost.
IXGX50N120C3H1
Our proven Technology
Disc IGBT PT-HiFrequency TO-247AD. High current handling capability. International standard packages. Optimized for low conduction & switching losses. Ultra fast anti-parallel diode (optional). Avalanche rated. Square RBSOA. Low cost alternative to MOSFETs in the 300V range. Drive simplicity with MOS Gate turn-on. High frequency IGBT. Power inverters. UPS. Motor drives. SMPS. PFC circuits. Battery chargers. Welding machines. Lamp ballast. In-rush current protection circuits. Dc choppers
Specifications
| Gewicht | 0.006 kg |
|---|---|
| Weight (g) | 6 |
| Voltage (V) | 4.2 |
| Current (A) | 95 |
| Product line | IGBT DISCRETE |
| Package Type | TO-247 PLUS |
| Current at 100C - 110C (A) | |
| Current at 25C (A) | |
| Emitter Saturation (V) | |
| Fall Time Induct. Load (ns) | |
| Thermal Res. Diode (kW) | |
| Thermal Res. IGBT (kW) | |
| VCES Collector-Emitter (V) |
Features and benefits
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Download file: IXGX50N120C3H1_datasheet