This 650V X3-Class Ultra Junction MOSFETs feature a fast body diode. They are available with 34A nominal current rating in TO-247 package. These Power MOSFETs feature significantly reduced channel resistance RDS(on) and gate charge Qg leading to an improvement in the Figure of Merit FOM: RDS(on) x Qg as compared to its predecessor X2-Class. These benefits enable designers to achieve higher efficiency and increased power density. This series of power MOSFETs feature fast body diodes which offer low reverse recovery charge (QRM) and short reverse recovery time (trr)
IXFH34N65X3
Our proven Technology
On-state resistance: RDS(ON) = 100mΩ. Reverse recovery time: trr = 150ns. Thermal resistance: RthJC = 0.28K/W. Gate charge: Qg = 29nC. Low static losses. Well-suited for high frequency applications. Simplified thermal design. High ruggedness against overvoltage. Low gate drive power demand.
Specifications
| Gewicht | 0.006 kg |
|---|---|
| Weight (g) | 6 |
| Fast Intrinsic Rectifier | Avalanche rating: EAS = 750mJ |
| Package Type | TO-247 |
| Business Group | POWER SEMI |
| Product Line | SUPER JUNCTION |
| Cont. Drain Curr. 25C (A) | 34 |
| Drain Source (V) | 650 |
| Gate Charge (nC) | 29 |
| Input Capacitance CISS (pF) | 2025 |
| Max On-Resistance 25C (Ohm) | 0.1 |
| Max Op Junc Temp (°C) | 150 |
| Max Reverse Recovery (ns) | |
| Power Dissipation (W) | 446 |
| Rev Trans Capacit. CRSS (pF) | 2.6 |
| Typ Rev Recov Time(ns) | 150 |
| Voltage Rating (V) | 650 |
| Voltage (V) | 650 |
| Current (A) | 34 |
Features and benefits
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Download file: IXFH34N65X3_datasheet