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IXFN420N10T

Our proven Technology

International Standard Packages. Low RDS(ON). Avalanche rated. Fast Intrinsic Rectifier. Switch-Mode and Resonant-Mode Power Supplies. Dc-dc converters. Uninterrupted Power Supplies. AC motor drives. Dc choppers. High Speed Power Switching Applications.

Specifications

Gewicht 0.03 kg
Weight (g)

30

Fast Intrinsic Rectifier

High Current Handling Capability

AC and DC Motor Drives

Battery Chargers

Package Type

SOT-227

Business Group

POWER SEMI

Product Line

POWER MOSFET DISCRETE

Cont. Drain Curr. 25C (A)

420

Drain Source (V)

100

Gate Charge (nC)

670

Input Capacitance CISS (pF)

47000

Max On-Resistance 25C (Ohm)

0.0023

Max Reverse Recovery (ns)

140

Power Dissipation (W)

1070

Rth (j-c) (K/W)

0.14

Voltage (V)

100

Current (A)

420

Features and benefits

Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(on), thus guaranteeing very low power Dissipation. This, combined with wide ranging operating junction temperature from -40 °C to 175 °C make them suitable candidates for automobile applications and other similar demanding applications in harsh environments.
Advantages:

Easy to Mount
Space Savings
High power density

More information and download request

For more information, access to the product datasheet, or to get in touch with one of our specialists. Please fill out the form below.

Thank you for your request

The datasheet is available below. We will respond to your request promptly.
Download file: IXFN420N10T_datasheet

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