Low RDS(on) HDMOS process. Rugged Polysilicon Gate Cell structure. Avalanche rated. International standard packages. High-side switching. Push pull amplifiers. Automatic test equipment.
| Gewicht | 0.006 kg |
|---|---|
| Weight (g) | 6 |
| Fast Intrinsic Rectifier | Low package inductance |
| AC and DC Motor Drives | Dc choppers |
| Package Type | TO-247 |
| Business Group | POWER SEMI |
| Product Line | POWER MOSFET DISCRETE |
| Cont. Drain Curr. 25C (A) | -10 |
| Drain Source (V) | -600 |
| Gate Charge (nC) | 135 |
| Input Capacitance CISS (pF) | 4665 |
| Max On-Resistance 25C (Ohm) | 1 |
| Max Reverse Recovery (ns) | |
| Power Dissipation (W) | 300 |
| Rth (j-c) (K/W) | 0.42 |
| Typ Rev Recov Time(ns) | 500 |
| Voltage (V) | -600 |
| Current (A) | -10 |
P-Channel Standard Power MOSFETs are available in voltage rating from -100V to -600V in industry-popular TO-247 and surface mountable TO-268 packages. They are ideal for Buck Converters and for loads that need to be connected to ground. They can pair-up with equivalent N-Channel MOSFETs to form a complementary pair for a number of applications requiring Totem Pole outputs.
Advantages:
High power density
Easy to mount
Space savings
