IXTL2N450

Name: IXTL2N450
SKU: IXTL2N450
Availability: InStock

Our proven Technology

High blocking voltage. Proprietary high voltage ISOPLUS™ packages. Up to 4.5 kV electrical isolation (DCB). Capacitor discharge circuits. High voltage power supplies. Laser and X-ray generation systems. High voltage relay disconnect circuits. Energy tapping applications from the power grid.

SKU: IXTL2N450Categories: MOSFETs (Si/SiC), Littelfuse vermogenshalfgeleiders

Specifications

Gewicht	0.01 kg
Weight (g)	10
Fast Intrinsic Rectifier	UL 94 V-0 Flammability qualified (molding epoxies)
AC and DC Motor Drives	Pulse circuits
Package Type	TO-264I
Business Group	POWER SEMI
Product Line	POWER MOSFET DISCRETE
Cont. Drain Curr. 25C (A)	2
Drain Source (V)	4500
Gate Charge (nC)	180
Input Capacitance CISS (pF)	6860
Max On-Resistance 25C (Ohm)	20
Max Reverse Recovery (ns)
Power Dissipation (W)	220
Rth (j-c) (K/W)	0.56
Typ Rev Recov Time(ns)	1750
Voltage (V)	4500
Current (A)	2

Features and benefits

The Very High Voltage series of N-Channel Standard MOSFETs are specifically designed to address demanding, fast-switching power conversion applications requiring very high blocking voltages up to 4.5kV. Thanks to the positive temperature coefficient of their on-state resistance, these very high voltage MOSFETs are ideally suited for parallel device operation, which provides cost-effective solutions compared to series-connected, lower-voltage MOSFET ones. This also results in reduction in the associated gate drive circuitry, further simplifying the design, saving PCB board space, and improving the reliability of the overall system.
Advantages:

Easy to mount
Space savings
High power density

More information and download request

For more information, access to the product datasheet, or to get in touch with one of our specialists. Please fill out the form below.

Thank you for your request

The datasheet is available below. We will respond to your request promptly.

Download file: IXTL2N450_datasheet