As opposed to the enhancement-mode MOSFETs, these depletion-mode devices operate in a ‘normally-on’ mode, requiring zero turn-on voltage at the gate terminal. With blocking voltages up to 1700V and low drain-to-source resistances they provide simplified control and reduced power dissipation in systems that are continuously “on” (emergency or burglar alarms, for instance).
IXTT2N170D2
Our proven Technology
Normally on operation. Linear mode tolerant. Low RDS(on). Internal standard packages. UL 94 V-0 Flammability qualified (molding epoxies). Audio amplifiers. Start-up circuits. Ramp generators. Current regulators. Active loads.
Specifications
| Gewicht | 0.004 kg |
|---|---|
| Weight (g) | 4 |
| Fast Intrinsic Rectifier | Useable body diode |
| AC and DC Motor Drives | Protection circuits |
| Package Type | TO-268S |
| Business Group | POWER SEMI |
| Product Line | POWER MOSFET DISCRETE |
| Cont. Drain Curr. 25C (A) | 2 |
| Drain Source (V) | 1700 |
| Gate Charge (nC) | 110 |
| Input Capacitance CISS (pF) | 3650 |
| Max Off-state Gate-Src (V) | -4 |
| Max On-Resistance 25C (Ohm) | 6.5 |
| Max Reverse Recovery (ns) | |
| Power Dissipation (W) | 568 |
| Rev Trans Capacit. CRSS (pF) | 80 |
| Rth (j-c) (K/W) | 0.22 |
| Voltage (V) | 1700 |
| Current (A) | 2 |
Features and benefits
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Download file: IXTT2N170D2_datasheet