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IXTX4N300P3HV

Our proven Technology

Proprietory high-voltage packages. High blocking voltage. Positive temperature coefficient of RDSON. Capacitor discharge circuits. High voltage power supplies. Laser and X-ray generation systems. High voltage relay disconnect circuits. CT and MRI scanners. Ultrasound machines.

SKU: IXTX4N300P3HVCategories: MOSFETs (Si/SiC)

Specifications

Gewicht 0.006 kg
Weight (g)

6

AC and DC Motor Drives

Pulse circuits

Package Type

TO-247 PLUS-HV

Business Group

POWER SEMI

Product Line

POWER MOSFET DISCRETE

Cont. Drain Curr. 25C (A)

4

Drain Source (V)

3000

Gate Charge (nC)

139

Input Capacitance CISS (pF)

3680

Max On-Resistance 25C (Ohm)

12.5

Max Reverse Recovery (ns)
Power Dissipation (W)

960

Rth (j-c) (K/W)

0.13

Typ Rev Recov Time(ns)

420

Voltage (V)

3000

Current (A)

4

Features and benefits

Polar3™ Standard Power MOSFETs are suitable for a wide variety of power switching systems, including high-voltage power supplies, capacitor discharge circuits, pulse circuits, laser and x-ray generation systems, high-voltage automated test equipment, and energy tapping applications from the power grid.
Due to the positive temperature coefficient of their on-state resistance, these high-voltage Power MOSFETs can be operated in parallel, thereby eliminating the need for lower voltage, series-connected devices and enabling cost-effective power systems. Other benefits include component reduction in gate drive circuitry, simpler design, improved reliability, and PCB space saving.
Advantages:

Easy to mount
Space savings
High power density

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