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IXTY2P50PA

Our proven Technology

AEC-Q101 qualified and PPAP available. Low thermal resistance RthJC. Low gate charge. Compact TO-252 footprint. Simplified approval and certification. Simplified thermal design. Minimal driver losses. Improved Reliability. PCB space savings. Automotive ECUs. Automotive sensor circuits. Push-pull amplifiers. Automatic test equipment.

SKU: IXTY2P50PACategories: MOSFETs (Si/SiC)

Specifications

Gewicht 0.00035 kg
Weight (g)

0.35

Fast Intrinsic Rectifier

Overvoltage ruggedness

AC and DC Motor Drives

High-side switches

Package Type

TO-252

Business Group

POWER SEMI

Product Line

SUPER JUNCTION

Cont. Drain Curr. 25C (A)

-2

Drain Source (V)

-500

Gate Charge (nC)

11.9

Input Capacitance CISS (pF)

600

Max On-Resistance 25C (Ohm)

4.2

Max Op Junc Temp (°C)

150

Max Reverse Recovery (ns)
Power Dissipation (W)

58

Rev Trans Capacit. CRSS (pF)

12

Rth (j-c) (K/W)

2.15

Typ Rev Recov Time(ns)

300

Voltage (V)

-500

Current (A)

-2

Features and benefits

IXTY2P50PA is an AEC-Q101 qualified and PPAP available, -500 V, -2 A, PolarTM P-channel enhancement mode power MOSFET in TO-252 (DPAK) package.
The P-channel MOSFET is manufactured using the Polar technology platform resulting in significant reduction in on-state resistance (RDS(on),max = 4.2 Ω) and gate charge requirement (Qg = 11.9 nC). The P-channel MOSFET has lower conduction loss and provides excellent switching performance while its dynamic dv/dt and avalanche rating makes it extremely rugged in demanding operating environments and applications. Additionally, the smaller footprint of the TO-252 package enables an efficient and power dense PCB design resulting in space savings.

More information and download request

For more information, access to the product datasheet, or to get in touch with one of our specialists. Please fill out the form below.

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The datasheet is available below. We will respond to your request promptly.
Download file: IXTY2P50PA_datasheet

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