Littelfuse 1700V, 750mOhm Silicon Carbide (SiC) MOSFET bring SiC fast switching and energy saving performance to the 1700V voltage range, focusing on auxiliary power supplies. The MOSFET is available in 3 different discrete packages, with the recent addition of a TO-268-2L option with extra clearance between source and gate pin. The separated source pin of the TO-268-7L option reduce significantly the parasitic source inductance path to the driver, which helps improve the efficiency in high power applications. The maximum operating junction temperature is 175 ºC.
LSIC1MO170E0750
Our proven Technology
On-state resistance RDS(ON) 750mΩ (typ). Gate resistance 29Ω typ.. Continuous drain current ~4.4A at 100°C. Operating temperature junction up to 175°C. Auxiliary power supplies. Energy generation and storage. Industrial SMPS and drives. EV DC-chargers.
Specifications
| Gewicht | 0.006157 kg |
|---|---|
| Weight (g) | 6.157 |
| Fast Intrinsic Rectifier | Reverse diode current 9A cont. at 25°C |
| AC and DC Motor Drives | Traction |
| Business Group | POWER SEMI |
| Product Line | SIC |
| Cont. Drain Curr. 25C (A) | 4.4 |
| Drain Source (V) | 1700 |
| Max On-Resistance 25C (Ohm) | 0.75 |
| Max Op Junc Temp (°C) | 175 |
| Max Reverse Recovery (ns) | |
| Rth (j-c) (K/W) | 2.5 |
| Voltage (V) | 1700 |
| Current (A) | 4.4 |
Features and benefits
More information and download request
For more information, access to the product datasheet, or to get in touch with one of our specialists. Please fill out the form below.
Thank you for your request
The datasheet is available below. We will respond to your request promptly.
Download file: LSIC1MO170E0750_datasheet