This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 °C. These diodes series are ideal for applications where improvements in efficiency, reliability, and thermal management are desired.
Littelfuse IXYS Discrete Diode LSIC2SD120D10A
Our proven Technology
SiC Schottky Diode 1200V 10A TO263-2L. Positive temperature coefficient for safe operation and ease of paralleling. 175 °C maximum operating junction temperature. Excellent surge capability. Extremely fast, temperature-independent switching behavior. Dramatically reduced switching losses compared to Si bipolar diodes. Boost diodes in PFC or DC/DC stages. Switch-mode power supplies. Uninterruptible power supplies. Solar inverters. Industrial motor drives. EV charging stations.
Specifications
| Weight (g) | 0 |
|---|---|
| Packaging | T&R |
| Product Line | SIC |
| Business Group | POWER SEMI |
| Forward Voltage Drop VF (V) | 1.5 |
| IF AV (A) | 10 |
| Max Rep Rev V VRRM (V) | 1200 |
| Max Op Junc Temp (°C) | 175 |
| IFSM (A) | 80 |
| QC Capacitive Charge (F) | 57 |
| Qualification Diode | Industrial |
| Voltage (V) | 1200 |
| Current (A) | 10 |
Features and benefits
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Download file: Datasheet-LSIC2SD120D10A