This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 °C. These diodes series are ideal for applications where improvements in efficiency, reliability, and thermal management are desired.
Littelfuse IXYS Discrete Diode LSIC2SD120N120PA
Our proven Technology
1200V/120A SiC SBD in SOT-227. Positive temperature coefficient for safe operation and ease of paralleling. 175 °C maximum operating junction temperature. Excellent surge capability. Extremely fast, temperature-independent switching behavior. Dramatically reduced switching losses compared to Si bipolar diodes. Zero reverse recovery current. Copper base plate with AlN isolation for low thermal resistance. Isolation voltage: 3000 V. UL Recognized under File E72873. Boost diodes in PFC or DC/DC stages. Switch-mode power supplies. Solar inverters. Uninterruptable power supplies. Industrial motor drives. Battery Chargers. High speed rectifier.
Specifications
| Gewicht | 0.029567 kg |
|---|---|
| Weight (g) | 29.567 |
| Package Type | SOT-227 |
| Packaging | TUBE |
| Product Line | SIC |
| Business Group | POWER SEMI |
| Forward Voltage Drop VF (V) | 1.5 |
| IF AV (A) | 120 |
| Max Rep Rev V VRRM (V) | 1200 |
| Max Op Junc Temp (°C) | 175 |
| IFSM (A) | 440 |
| QC Capacitive Charge (F) | 368 |
| Qualification Diode | Industrial |
| Voltage (V) | 1200 |
| Current (A) | 120 |
Features and benefits
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Download file: Datasheet-LSIC2SD120N120PA