Silicon chip on Direct-Copper-Bond substrate. Fast CoolMOS™(1) power MOSFET 4th generation. Enhanced total power density. Switch mode power supplies. Uninterruptible power supplies. Welding. Inductive heating. PDP and LCD adapter.
| Gewicht | 0.006 kg |
|---|---|
| Weight (g) | 6 |
| Fast Intrinsic Rectifier | Low thermal resistance |
| AC and DC Motor Drives | Power factor correction (PFC) |
| Package Type | TO-247 |
| Business Group | POWER SEMI |
| Product Line | SUPER JUNCTION |
| Cont. Drain Curr. 25C (A) | 20 |
| Drain Source (V) | 600 |
| Gate Charge (nC) | 32 |
| Input Capacitance CISS (pF) | 1520 |
| Max On-Resistance 25C (Ohm) | 0.2 |
| Max Reverse Recovery (ns) | |
| Power Dissipation (W) | 208 |
| Rth (j-c) (K/W) | 0.6 |
| Typ Rev Recov Time(ns) | 340 |
| Voltage (V) | 600 |
| Current (A) | 20 |
These Power MOSFETs based on Super Junction technology feature the lowest RDS(on) in 600V-800V class MOSFETs. Internal DCB isolation simplifies assembly and reduces thermal resistance from junction to heat sink. These devices are Avalanche rated, thereby guaranteeing rugged operation.
Advantages:
Easy assembly
Space savings
High power density
High reliability
(1) CoolMOS™ is a trademark of Infineon Technologies AG.
