The new 200V X4-Class Ultra Junction MOSFETs are available in 60A nominal current rating and TO-220 package. These Power MOSFETs feature significantly reduced channel resistance RDS(on). This new family exhibits significant reduction in the Figure of Merit (FOM) RDS(on) x Qg compared to its predecessor X3. These benefits enable designers to achieve higher efficiency and increased power density.
IXTP60N20X4
Our proven Technology
Low on-state resistance RDS(ON) = 21mΩ. Low thermal resistance RthJC = 0.6K/W. Low gate charge Qg = 33 nC. Low static losses. Simplified thermal design. Low gate drive power demand.
Specifications
| Fast Intrinsic Rectifier | 175°C operating junction temperature |
|---|---|
| Package Type | TO-220 |
| Business Group | POWER SEMI |
| Product Line | SUPER JUNCTION |
| Cont. Drain Curr. 25C (A) | 60 |
| Drain Source (V) | 200 |
| Gate Charge (nC) | 33 |
| Input Capacitance CISS (pF) | 2450 |
| Max On-Resistance 25C (Ohm) | 0.021 |
| Max Op Junc Temp (°C) | 175 |
| Max Reverse Recovery (ns) | |
| Power Dissipation (W) | 250 |
| Rev Trans Capacit. CRSS (pF) | 0.95 |
| Rth (j-c) (K/W) | 0.6 |
| Typ Rev Recov Time(ns) | 107 |
| Voltage (V) | 200 |
| Current (A) | 60 |
Features and benefits
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Download file: IXTP60N20X4_datasheet