The LSIC2SD170Bxx 1700V SiC Schottky Barrier Diode in TO-247-2L are available in 10A, 25A and 50A current ratings.
SiC Schottky Diodes have negligible reverse recovery, which reduces switching losses and system efficiency.
This series of silicon carbide (SiC) Schottky diodes has high surge capability, positive temperature coefficient for ease of paralleling and a maximum operating junction temperature of 175°C.
These series is an ideal candidate for applications where improvements in efficiency, improved reliability for paralleling, and thermal management are needed.
Littelfuse IXYS Discrete Diode LSIC2SD170B25
Our proven Technology
SiC Schottky Diode 1700V 25A TO-247-2L. Positive temperature coefficient. 175°C maximum operating junction temperature. Extremely fast, temperature-independent switching behavior. Nearly zero reverse recovery current. High surge capability. Low RthJC. Boost diodes for power factor correction or dc–dc conversion. Switch-mode power supplies. Uninterruptible power supplies. Solar inverters. Industrial motor drives. EV charging stations.
Specifications
| Weight (g) | 0 |
|---|---|
| Packaging | TUBE |
| Product Line | SIC |
| Business Group | POWER SEMI |
| Forward Voltage Drop VF (V) | 1.5 |
| IF AV (A) | 25 |
| Max Rep Rev V VRRM (V) | 1700 |
| Max Op Junc Temp (°C) | 175 |
| IFSM (A) | 144 |
| QC Capacitive Charge (F) | 175 |
| Qualification Diode | Industrial |
| Voltage (V) | 1700 |
| Current (A) | 25 |
Features and benefits
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Download file: Datasheet-LSIC2SD170B25