With on-resistance as low as 17 milliohms and current ratings ranging from 22A to 150A, these IXTH48N60X2A devices are optimized for soft-switching resonant-mode power conversion applications.
The intrinsic fast body diodes HiPerFETs of the MOSFETs display very soft recovery characteristics, minimizing electromagnetic interference (EMI), especially in half or full-bridge switching topologies. With low reverse recovery charge and time, the body diodes can be utilized to make sure that all the energies are removed during high-speed switching to avoid device failure and achieve high efficiency.
IXTH48N60X2A
Our proven Technology
International Standard Packages. Low RDS(ON) and QG. Avalanche Rated. High Power Density. Easy to Mount. Space Savings. Switch-Mode and Resonant-Mode Power Supplies. Dc-dc converters. Ac and dc Motor Drives. Robotics and Servo Controls.
Specifications
| Weight | 0.006 kg |
|---|---|
| Weight (g) | 6 |
| Fast Intrinsic Rectifier | Low Package Inductance |
| AC and DC Motor Drives | PFC Circuits |
| Business Group | POWER SEMI |
| Product Line | SUPER JUNCTION |
| Cont. Drain Curr. 25C (A) | 48 |
| Drain Source (V) | 600 |
| Gate Charge (nC) | 76 |
| Input Capacitance CISS (pF) | 4300 |
| Max On-Resistance 25C (Ohm) | 0.065 |
| Max Reverse Recovery (ns) | |
| Power Dissipation (W) | 660 |
| Rth (j-c) (K/W) | 0.19 |
| Typ Rev Recov Time(ns) | 400 |
| Voltage (V) | 600 |
| Current (A) | 48 |
Features and benefits
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Download file: IXTH48N60X2A_datasheet
