Littelfuse is recognised as the Worldwide leader in distributed gate technology. These devices are available with blocking voltages to 4.5kV and average currents in excess of 5kA, with tq ratings from 10µs. The unique distributed gate design and lifetime control features give these devices both high di/dt capability and fast, low recovery turn-off, while maintaining a low on-state voltage drop. Ideally suited to applications including: induction power supplies, high frequency inverters/converters, UPS and pulse power.
For additional technical details, please contact support .
R1211NC12D
Our proven Technology
Alternative for: R1211NC08D, R1211NC10D, R1211NS08D, R1211NS10D, R1211NS12D, R350CH08CLO, R350CH08DLO, R350CH08ELO, R350CH08FKO, R350CH10CLO, R350CH10DLO, R350CH10ELO, R350CH10FKO, R350CH12CLO, R350CH12DLO, R350CH12ELO, R350CH12FKO, R350SH08CLO, R350SH08DLO, R350SH08ELO, R350SH08FKO, R350SH10CLO, R350SH10DLO, R350SH10ELO, R350SH10FKO, R350SH12CLO, R350SH12DLO, R350SH12ELO, R350SH12FKO
Specifications
| IF(AV) @ TK 55C (A) | 1211 |
|---|---|
| I Squared t Thyristor (A) | 1.548 x 10⁶ |
| VRRM (V) | 1200 |
| ITSM 10ms Half Sine Thy (A) | 17600 |
| VDRM (V) | 1200 |
| Reverse Recovery Charge (µC) | 230 |
| Slope Resistance (mOhm) | 0.23 |
| Rth(j-h) 180C SineWve (K/W) | 0.024 |
| Threshold Voltage (V) | 1.72 |
| Voltage (V) | 1200 |
| Current (A) | 1211 |
Features and benefits
More information and download request
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The datasheet is available below. We will respond to your request promptly.
Download file: R1211NC12D_datasheet