Our N-channel depletion mode field effect transistors (FET) utilize a proprietary third generation vertical DMOS process. The third generation process realizes world-class, high voltage MOSFET performance in an economical silicon gate process. The vertical DMOS process yields a robust device for high power applications with high input impedance. These highly reliable FET devices have been used extensively in our solid state relays for industrial and telecommunications applications.
CPC3708CTR
Our proven Technology
Device Normally On. High Breakdown Voltage. Low On-Resistance. Low VGS (off) Voltage. Low On-Resistance at Cold Temperatures. High Input Impedance. Low Input and Output Leakage. Small Package Size: SOT-23, SOT-89 & SOT-223. Normally On Switches. Ignition Modules. Power Supplies. Telecommunications. Support for LITELINK Devices.
Specifications
| Weight | 0.000076 kg |
|---|---|
| Weight (g) | 0.076 |
| Business Group | IC |
| Product line | SSR ICS |
| Package Type | SOT-89 |
| BVDSX (V) | 350 |
| RDSon (Ohm) | 14 |
| VGSoff min | -3.6 |
| IDSS Min (mA) | 130 |
| Voltage (V) | 350 |
| Current (mA) | 130 |
Features and benefits
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Download file: CPC3708CTR_datasheet