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IXFH100N30X3

Our proven Technology

Lowest on-resistance RDS(ON) and gate charge Qg. Fast soft recovery body diode. dv/dt ruggedness. International standard packages. Battery chargers for light electric vehicles. Synchronous rectification in switching power supplies. Dc-dc converters. Uninterruptible power supplies. Electric forklifts. Class-D audio amplifiers. Telecom systems.

SKU: IXFH100N30X3Categories: MOSFETs (Si/SiC), Semiconductors Littelfuse

Specifications

Weight 0.006 kg
Weight (g)

6

Fast Intrinsic Rectifier

Superior avalanche capability

AC and DC Motor Drives

Motor control

Package Type

TO-247

Business Group

POWER SEMI

Product Line

SUPER JUNCTION

Cont. Drain Curr. 25C (A)

100

Drain Source (V)

300

Gate Charge (nC)

122

Input Capacitance CISS (pF)

7660

Max On-Resistance 25C (Ohm)

0.0135

Max Reverse Recovery (ns)
Power Dissipation (W)

48

Rth (j-c) (K/W)

0.26

Typ Rev Recov Time(ns)

130

Voltage (V)

300

Current (A)

100

Features and benefits

Developed using a charge compensation principle and proprietary process technology, these Ultra Junction MOSFETs provide the best-in-class Figure of Merit (on-resistance times gate charge), which translates into lowest conduction and switching losses. They exhibit the lowest on-state resistances in the industry.
With low reverse recovery charge and time, the body diodes are capable of removing all the leftover energies during high-speed switching to avoid device failure and achieve high efficiency.
Moreover, these new devices are avalanche capable and exhibit a superior dv/dt performance as well. They are robust against device failure caused by voltage spikes and accidental turn-on of parasitic bipolar transistors inherent in the MOSFET structure. As such these rugged devices require fewer snubbers and can be used in both hard and soft switching power converters.

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Download file: IXFH100N30X3_datasheet

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