Developed using a charge compensation principle and proprietary process technology, these Ultra Junction MOSFETs provide the best-in-class Figure of Merit (on-resistance times gate charge), which translates into lowest conduction and switching losses. They exhibit the lowest on-state resistances in the industry.
With low reverse recovery charge and time, the body diodes are capable of removing all the leftover energies during high-speed switching to avoid device failure and achieve high efficiency.
Moreover, these new devices are avalanche capable and exhibit a superior dv/dt performance as well. They are robust against device failure caused by voltage spikes and accidental turn-on of parasitic bipolar transistors inherent in the MOSFET structure. As such these rugged devices require fewer snubbers and can be used in both hard and soft switching power converters.
IXFN240N25X3
Our proven Technology
Lowest on-resistance RDS(ON) and gate charge Qg. Fast soft recovery body diode. dv/dt ruggedness. International standard packages. Battery chargers for light electric vehicles. Synchronous rectification in switching power supplies. Dc-dc converters. Uninterruptible power supplies. Electric forklifts. Class-D audio amplifiers. Telecom systems.
Specifications
| Weight | 0.03 kg |
|---|---|
| Weight (g) | 30 |
| Fast Intrinsic Rectifier | Superior avalanche capability |
| AC and DC Motor Drives | Motor control |
| Package Type | SOT-227 |
| Business Group | POWER SEMI |
| Product Line | SUPER JUNCTION |
| Cont. Drain Curr. 25C (A) | 240 |
| Drain Source (V) | 250 |
| Gate Charge (nC) | 345 |
| Input Capacitance CISS (pF) | 23800 |
| Max On-Resistance 25C (Ohm) | 0.0045 |
| Max Reverse Recovery (ns) | |
| Power Dissipation (W) | 695 |
| Rth (j-c) (K/W) | 0.18 |
| Typ Rev Recov Time(ns) | 165 |
| Voltage (V) | 250 |
| Current (A) | 240 |
Features and benefits
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Download file: IXFN240N25X3_datasheet