IXTH02N250

Name: IXTH02N250
SKU: IXTH02N250
Availability: InStock

Our proven Technology

High blocking voltage. Proprietary high voltage ISOPLUS™ packages. Up to 4.5 kV electrical isolation (DCB). Capacitor discharge circuits. High voltage power supplies. Laser and X-ray generation systems. High voltage relay disconnect circuits. Energy tapping applications from the power grid.

SKU: IXTH02N250Categories: MOSFETs (Si/SiC), Semiconductors Littelfuse

Specifications

Weight	0.006 kg
Weight (g)	6
Fast Intrinsic Rectifier	UL 94 V-0 Flammability qualified (molding epoxies)
AC and DC Motor Drives	Pulse circuits
Package Type	TO-247
Business Group	POWER SEMI
Product Line	POWER MOSFET DISCRETE
Cont. Drain Curr. 25C (A)	0.2
Drain Source (V)	2500
Gate Charge (nC)	7.4
Input Capacitance CISS (pF)	116
Max On-Resistance 25C (Ohm)	450
Max Reverse Recovery (ns)
Power Dissipation (W)	83
Rth (j-c) (K/W)	1.5
Typ Rev Recov Time(ns)	1500
Voltage (V)	2500
Current (A)	0.2

Features and benefits

The Very High Voltage series of N-Channel Standard MOSFETs are specifically designed to address demanding, fast-switching power conversion applications requiring very high blocking voltages up to 4.5kV. Thanks to the positive temperature coefficient of their on-state resistance, these very high voltage MOSFETs are ideally suited for parallel device operation, which provides cost-effective solutions compared to series-connected, lower-voltage MOSFET ones. This also results in reduction in the associated gate drive circuitry, further simplifying the design, saving PCB board space, and improving the reliability of the overall system.
Advantages:

Easy to mount
Space savings
High power density

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Download file: IXTH02N250_datasheet