This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 °C. These diodes series are ideal for applications where improvements in efficiency, reliability, and thermal management are desired.
Littelfuse IXYS Discrete Diode DCK10I650PA
Our proven Technology
SiC Diode in TO220-2L. Positive temperature coefficient for safe operation and ease of paralleling. 175°C maximum operating junction temperature. Excellent surge capability. Extremely fast, temperature-independent switching behavior. Dramatically reduced switching losses compared to Si bipolar diodes. MSL 1 rated. Boost diodes in PFC or DC/DC stages. Switch-mode power supplies. Uninterruptible power supplies. Solar inverters. Industrial motor drives. Battery chargers. High speed rectification.
Specifications
| Weight | 0.00195 kg |
|---|---|
| Weight (g) | 1.95 |
| Packaging | TUBE |
| Product Line | SIC |
| Business Group | POWER SEMI |
| Forward Voltage Drop VF (V) | 1.37 |
| IF AV (A) | 14.4 |
| Max Rep Rev V VRRM (V) | 650 |
| Max Op Junc Temp (°C) | 175 |
| IFSM (A) | 60 |
| QC Capacitive Charge (F) | 25.5 |
| Voltage (V) | 650 |
| Current (A) | 14.4 |
Features and benefits
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Download file: Datasheet-DCK10I650PA