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IXTY1R4N120PHV

Our proven Technology

International Standard Packages. Dynamic dv/dt rating. Low RDS(on) and Qg. Low Package Inductance. Dc-dc converters. Battery chargers. Lamp ballasts. Ac and dc Motor Drives. Robotics and Servo Controls. Laser drivers.

SKU: IXTY1R4N120PHVCategories: MOSFETs (Si/SiC)

Specifications

Weight 0.00035 kg
Weight (g)

0.35

Fast Intrinsic Rectifier

Avalanche Rated

AC and DC Motor Drives

Switched-mode and resonant-mode power supplies

Package Type

TO-252 HV

Business Group

POWER SEMI

Product Line

POWER MOSFET DISCRETE

Cont. Drain Curr. 25C (A)

1.4

Drain Source (V)

1200

Gate Charge (nC)

24.8

Input Capacitance CISS (pF)

666

Max On-Resistance 25C (Ohm)

13

Max Reverse Recovery (ns)
Power Dissipation (W)

86

Rth (j-c) (K/W)

1.45

Typ Rev Recov Time(ns)

900

Voltage (V)

1200

Current (A)

1.4

Features and benefits

Polarâ„¢ Standard Power MOSFETs are tailored to provide designers with a device solution that offers the best compromise between performance and cost. These devices incorporate the Polar technology platform to achieve low on-state resistances (Rdson). Polar Standard MOSFETs feature low gate charge Qg values, resulting in more efficient switching at all frequencies. This gives the designer the option to operate at higher frequencies, which enables the use of smaller passive components in a variety of load switching designs. The avalanche capabilities of these devices add an additional safeguard against over-voltage transients.
Advantages:

Easy to mount
Space savings
High power density

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