International standard packages. Rugged polysilicon gate cell structure. Rated for Unclamped Inductive Load Switching (UIS). Dc-dc converters. Battery chargers. Dc choppers. AC motor control.
| Weight | 0.006 kg |
|---|---|
| Weight (g) | 6 |
| Fast Intrinsic Rectifier | Fast intrinsic Rectifier |
| AC and DC Motor Drives | Switched-mode and resonant-mode power supplies |
| Package Type | TO-247 |
| Business Group | POWER SEMI |
| Product Line | POWER MOSFET DISCRETE |
| Cont. Drain Curr. 25C (A) | 52 |
| Drain Source (V) | 300 |
| Gate Charge (nC) | 150 |
| Input Capacitance CISS (pF) | 5300 |
| Max On-Resistance 25C (Ohm) | 0.06 |
| Max Reverse Recovery (ns) | 250 |
| Power Dissipation (W) | 357 |
| Rth (j-c) (K/W) | 0.35 |
| Voltage (V) | 300 |
| Current (A) | 52 |
The Q-Class series devices are popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. They are available in many standard industrial packages including isolated types.
Advantages:
Easy assembly
High Power density
Space savings
