IXFP4N100QM

Our proven Technology

International standard packages. Rugged polysilicon gate cell structure. Rated for Unclamped Inductive Load Switching (UIS). Dc-dc converters. Battery chargers. Dc choppers. AC motor control.

SKU: IXFP4N100QMCategories: MOSFETs (Si/SiC), Semiconductors Littelfuse

Specifications

Fast Intrinsic Rectifier

Fast intrinsic Rectifier

AC and DC Motor Drives

Switched-mode and resonant-mode power supplies

Package Type

TO-220FP

Business Group

POWER SEMI

Product Line

POWER MOSFET DISCRETE

Cont. Drain Curr. 25C (A)

2.2

Drain Source (V)

1000

Gate Charge (nC)

43.5

Input Capacitance CISS (pF)

1185

Max On-Resistance 25C (Ohm)

3

Max Reverse Recovery (ns)

250

Power Dissipation (W)

46

Rth (j-c) (K/W)

2.7

Voltage (V)

1000

Current (A)

2.2

Features and benefits

The Q-Class series devices are popular Power MOSFETs (HiPerFETâ„¢) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. They are available in many standard industrial packages including isolated types.
Advantages:

Easy assembly
High Power density
Space savings

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Download file: IXFP4N100QM_datasheet

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