The high-performance ceramic substrate based isolated package offers inherent isolation, higher thermal conductivity and reduces thermal resistance junction-to-heatsink while remaining industry standard footprint compatible. These SiC MOSFETs are engineered to reduce the on-state resistance, to minimize the power losses, while maintaining excellent switching performance. This makes them ideal for high-frequency, and high-efficiency power-management applications like DC/DC converter, switch mode power supplies, induction heating and motor drives.
IXSJ80N120R1
Our proven Technology
1200V with low RDS(on) = 18 mΩ. SiC MOSFET Technology with 0/+15..+18 V gate drive. High-performance ceramic based isolated package. Low input capacitance 4522 pF. Industry standard package outline. Low conduction losses. Low gate drive power requirements. Improved overall thermal resistance RthJH and power handling capability. Low thermal management requirements. Enhanced safety and suitability for applications requiring stringent isolation standards. Low switching losses. Compatible with industry standard TO-247-3L package. Solar inverters. DC/DC converters. EV charging infrastructures. Motor drives. Induction heating.
Specifications
| Fast Intrinsic Rectifier | Isolation voltage 2500 VAC (RMS), 1 minute |
|---|---|
| AC and DC Motor Drives | Switch mode power supplies |
| Business Group | POWER SEMI |
| Product Line | SIC |
| Cont. Drain Curr. 25C (A) | 85 |
| Drain Source (V) | 1200 |
| Isolated Tab RMS (V) | 2500 |
| Max On-Resistance 25C (Ohm) | 0.018 |
| Max Op Junc Temp (°C) | 150 |
| Max Reverse Recovery (ns) | |
| Rth (j-c) (K/W) | 0.47 |
| Voltage (V) | 1200 |
| Current (A) | 85 |
Features and benefits
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Download file: IXSJ80N120R1_datasheet