The new 200V X4 Ultra Junction MOSFETs are designed with the latest Ultra Junction technology for high efficiency power applications. They are available in TO-247 and TO-268HV Packages. They offer lower RDS(on) simultaneously with reduced gate and output charges, which allows for more efficient switching at given frequency.
IXTH220N20X4
Our proven Technology
Low Gate Charge. Low RDS(on). Low RthJC. High Avalanche rating (900mJ – 1J). Switched-Mode and Resonant-Mode Power Supplies. UPS and Inverters. DC-DC and AC-DC Converters. Redundant power switches.
Specifications
| Weight | 0.006 kg |
|---|---|
| Weight (g) | 6 |
| Fast Intrinsic Rectifier | 175°C Operating Temperature |
| AC and DC Motor Drives | Battery circuits |
| Package Type | TO-247 |
| Business Group | POWER SEMI |
| Product Line | SUPER JUNCTION |
| Cont. Drain Curr. 25C (A) | 220 |
| Drain Source (V) | 200 |
| Gate Charge (nC) | 157 |
| Input Capacitance CISS (pF) | 12300 |
| Max On-Resistance 25C (Ohm) | 0.0055 |
| Max Op Junc Temp (°C) | 175 |
| Max Reverse Recovery (ns) | |
| Power Dissipation (W) | 800 |
| Rev Trans Capacit. CRSS (pF) | 5.4 |
| Rth (j-c) (K/W) | 0.19 |
| Typ Rev Recov Time(ns) | 140 |
| Voltage (V) | 200 |
| Current (A) | 220 |
Features and benefits
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Download file: IXTH220N20X4_datasheet