These devices are developed using a charge compensation principle and proprietary process technology, resulting in Power MOSFETs with significantly reduced resistance RDS(on) and gate charge Qg. A low on-state resistance reduces the conduction losses; it also lowers the energy stored in the output capacitance, minimizing the switching losses. A low gate charge results in higher efficiency at light loads as well as lower gate drive requirements. In addition, these MOSFETs are avalanche rated and exhibit a superior dv/dt performance. Also due to the positive temperature coefficient of their on-state resistance, they can be operated in parallel to meet higher current requirements.
IXTN400N15X4
Our proven Technology
Low on-resistance RDS(ON) and gate charge Qg. dv/dt ruggedness. Avalanche capability. Synchronous rectification in switching power supplies. Motor control (48V-80V systems). Uninterruptible power supplies. Electric forklifts. Class-D audio amplifiers. Telecom systems.
Specifications
| Weight | 0.03 kg |
|---|---|
| Weight (g) | 30 |
| Fast Intrinsic Rectifier | International standard packages |
| AC and DC Motor Drives | Dc-dc converters |
| Package Type | SOT-227 |
| Business Group | POWER SEMI |
| Product Line | SUPER JUNCTION |
| Cont. Drain Curr. 25C (A) | 400 |
| Drain Source (V) | 150 |
| Gate Charge (nC) | 430 |
| Input Capacitance CISS (pF) | 14500 |
| Max On-Resistance 25C (Ohm) | 0.0031 |
| Max Op Junc Temp (°C) | 175 |
| Max Reverse Recovery (ns) | |
| Power Dissipation (W) | 1070 |
| Rev Trans Capacit. CRSS (pF) | 8 |
| Rth (j-c) (K/W) | 0.14 |
| Typ Rev Recov Time(ns) | 175 |
| Voltage (V) | 150 |
| Current (A) | 400 |
Features and benefits
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Download file: IXTN400N15X4_datasheet