IXTQ180N10T

Name: IXTQ180N10T
SKU: IXTQ180N10T
Availability: InStock

Our proven Technology

International Standard Packages. Low R_DS(ON). Avalanche rated. Fast Intrinsic Rectifier. Switch-Mode and Resonant-Mode Power Supplies. Dc-dc converters. Uninterrupted Power Supplies. AC motor drives. Dc choppers. High Speed Power Switching Applications.

SKU: IXTQ180N10TCategories: MOSFETs (Si/SiC)

Specifications

Weight	0.0055 kg
Weight (g)	5.5
Fast Intrinsic Rectifier	High Current Handling Capability
AC and DC Motor Drives	Battery Chargers
Package Type	TO-3P
Business Group	POWER SEMI
Product Line	POWER MOSFET DISCRETE
Cont. Drain Curr. 25C (A)	180
Drain Source (V)	100
Gate Charge (nC)	151
Input Capacitance CISS (pF)	6900
Max On-Resistance 25C (Ohm)	0.0064
Max Reverse Recovery (ns)
Power Dissipation (W)	480
Rth (j-c) (K/W)	0.31
Typ Rev Recov Time(ns)	100
Voltage (V)	100
Current (A)	180

Features and benefits

Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(on), thus guaranteeing very low power Dissipation. This, combined with wide ranging operating junction temperature from -40 °C to 175 °C make them suitable candidates for automobile applications and other similar demanding applications in harsh environments.
Advantages:

Easy to Mount
Space Savings
High power density

More information and download request

For more information, access to the product datasheet, or to get in touch with one of our specialists. Please fill out the form below.

Thank you for your request

The datasheet is available below. We will respond to your request promptly.

Download file: IXTQ180N10T_datasheet