Medium voltage applications place additional demands on phase controlled thyristors. To meet these demands we have developed a comprehensive range of thyristors optimised for medium voltage applications and series operation. As voltages increase, so do switching losses and turn-off time to a point where they become significant in line frequency applications. Our patented distributed gate architecture ensures excellent switching performance over a wide range of voltage, current and di/dt. Device lifetime is also engineered to achieve an optimum balance between conduction losses, commutation losses and turn-off time to give maximum power handling from line frequency to 400Hz. This also gives significant benefits when series or parallel connection of devices is required. Medium voltage thyristors are available from 3.2kV up to 6.5kV with silicon diameters from 38mm to 96mm making them particularly suitable for high power converters such as medium voltage DC drives, medium voltage soft starts and utility applications such as HVDC, static VAr compensators, excitation and transfer switches.
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K4005EA520
Our proven Technology
Alternative for: K3503FD500, K3503FD520
Specifications
| IF(AV) @ TK 55C (A) | 4005 |
|---|---|
| I Squared t Thyristor (A) | 9.33 x 10⁶ |
| TJ(max) (°C) | 125 |
| VRRM/DRM (V) | 5200 |
| ITSM 10ms Half Sine Thy (A) | 43200 |
| Reverse Recovery Charge (µC) | 8000 |
| Slope Resistance (mOhm) | 0.216 |
| Rth(j-h) 120C RctPlse (K/W) | 0.0054 |
| Rth(j-h) 180C SineWve (K/W) | 0.005 |
| Threshold Voltage (V) | 1.359 |
| Voltage (V) | 5200 |
| Current (A) | 4005 |
Features and benefits
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Download file: K4005EA520_datasheet