Developed using our proprietary XPT™ thin-wafer technology and state-of-the-art 5th generation (GenX5™) Trench IGBT process, these devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. These IGBTs have square Reverse Bias Safe Operating Areas (RBSOA) and with 650V breakdown voltage, making them ideal for snubber-less hard-switching applications. Other qualities include a positive collector-to-emitter voltage temperature coefficient which enables designers to use multiple devices in parallel to meet high current requirements and low gate charges which help reduce gate drive requirements and switching losses.Advantages: Hard-switching capabilities High power densities Low gate drive requirements Ease of replacement and availability of isolation package
IXYT90N65A5HV
Our proven Technology
Disc IGBT XPT Gen5 650V A5 90A TO-268HV. Low Vcesat, low Eon/Eoff,. Optimized for low switching frequencies. High surge current capability. Square Reverse Bias Safe Operating Areas （RBSOA). Positive thermal coefficient of Vcesat. Battery Chargers. Lamp Ballast. Motor Drives. Power Inverters. Welding Machines
Specifications
| Weight | 0.004 kg |
|---|---|
| Weight (g) | 4 |
| Voltage (V) | 1.35 |
| Current (A) | 220 |
| Product line | IGBT DISCRETE |
| Package Type | TO-268HV |
| Current at 100C - 110C (A) | |
| Current at 25C (A) | |
| Emitter Saturation (V) | |
| Fall Time Induct. Load (ns) | |
| VCES Collector-Emitter (V) |
Features and benefits
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Download file: IXYT90N65A5HV_datasheet