The 600V X3-Class Ultra Junction MOSFET IXFT60N60X3HV is available in 60A nominal current rating and TO-268HV package. These Power MOSFETs feature significantly reduced channel resistance RDS(on) and gate charge Qg. They feature the lowest figures of merit (FOM) RDS(on)xQg and RDS(on)xRthJC. These benefits enable designers to achieve higher efficiency using simplified thermal design. This HiPerFET™ series of power MOSFETs feature body diodes which offer low reverse recovery charge (QRM) and short reverse recovery time (trr).
IXFT60N60X3HV
Our proven Technology
Low static losses. Well-suited for high frequency applications. Simplified thermal design. Low gate drive power demand. Power supplies for telecom and server applications in hard- and soft-switching designs. Unidirectional and bidirectional DC/DC converter. Battery charging circuits.
Specifications
| Weight | 0.005 kg |
|---|---|
| Weight (g) | 5 |
| Fast Intrinsic Rectifier | High ruggedness against overvoltage |
| AC and DC Motor Drives | DC-AC converter in mobile application |
| Package Type | TO-268HV |
| Business Group | POWER SEMI |
| Product Line | SUPER JUNCTION |
| Cont. Drain Curr. 25C (A) | 60 |
| Drain Source (V) | 600 |
| Gate Charge (nC) | 51 |
| Input Capacitance CISS (pF) | 3450 |
| Max On-Resistance 25C (Ohm) | 0.051 |
| Max Op Junc Temp (°C) | 150 |
| Max Reverse Recovery (ns) | |
| Power Dissipation (W) | 625 |
| Rev Trans Capacit. CRSS (pF) | 53 |
| Rth (j-c) (K/W) | 0.2 |
| Typ Rev Recov Time(ns) | 175 |
| Voltage (V) | 600 |
| Current (A) | 60 |
Features and benefits
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Download file: IXFT60N60X3HV_datasheet