Home » Products » Semiconductors Hitachi Energy » Diode dies » Diode dies 5SLZ 86G1700
Book a Speed date

Diode dies 5SLZ 86G1700

Our proven Technology

When looking for chipsets featuring highest switching performance,
ruggedness and reliability, Hitachi Energy’s IGBT chips with accompanying
diodes are certainly the preferred choice.

SKU: 5SLZ 86G1700Categories: Diode dies

Specifications

Brand

Hitachi Energy

Product type

Diode dies

Material housing

see datasheet

Voltage (kV)

1.7

Chipset Type

SPT++/FSA

Size AxB (mm)

6.8 x 11.4

Thickness (µm)

370

VPRM (V)

1700

IF (A)

100

VF (V) typ 125 °C

1.75

Max dies per wafer

177

Features and benefits

Hitachi Energy’s SPT (Soft Punch Through) chipsets and their improved versions with lower losses (SPT+ and SPT++) are available at 1200 V and 1700 V. They feature highest output power per rated ampere due to a moderate chip shrinkage and thus larger die area. Additionally to these well-established planar chip technologies, starting 2022, Hitachi Energy is adding a new chipset based on the recently developed Trench Fine Pattern (TFP) technology.

Typical applications for 1200 V are power converters for industrial drives, solar energy, battery backup systems (UPS) and electrical vehicles. Applications for 1700 V also include industrial power conversion & drives, wind turbines and traction converters.

More information and download request

For more information, access to the product datasheet, or to get in touch with one of our specialists. Please fill out the form below.

Thank you for your request

The datasheet is available below. We will respond to your request promptly.

Book a Speed date

Send your question(s) to

Send your questions