Key components of demanding applications
Hitachi Energy’s semiconductors are essential components in a wide range of demanding applications across power transmission and distribution, industry, mobility, and renewable energy. Customers around the world rely on Hitachi Energy’s high-quality power semiconductor products, used in power ranges from 50 kW to 10 GW.
Applications
- Power transmission and distribution: HVDC, FACTS, STATCOM, and other high-efficiency systems
- Industry: medium- and low-voltage drives, soft starters, UPSs, high-power rectifiers, excitation systems, and more
- Renewable energy: converters for pumped hydro, wind turbines, and solar energy systems
- Mobility: rail and subway drives, traction converters, and electric vehicles
Integrated gate-commutated thyristors (IGCT’s) from Hitachi Energy
All Hitachi Energy IGCTs are press-pack devices designed for superior thermal and electrical performance. They are mounted with high mechanical pressure onto heat sinks, which also act as electrical contacts to the power terminals. This robust press-pack construction ensures excellent heat dissipation, uniform pressure distribution, and long-term reliability in high-power systems.
The IGCT’s integrated turn-on/off control unit is a key element of its design. It requires only an external power supply, and its control functions are conveniently accessed through optical fiber connections. Typical control power consumption ranges from 10 to 100 watts.
IGCTs are optimized for low conduction losses and high switching efficiency. Their standard switching frequency lies around 500 Hz, but unlike conventional GTOs, the upper switching frequency is mainly limited by thermal management and heat dissipation capacity. Thanks to their rapid transition between the on and off states, IGCTs can deliver short on-off pulse bursts with switching frequencies of up to 40 kHz, making them ideal for demanding industrial and traction applications.
To ensure safe operation, IGCTs require a turn-on protective network (typically an inductor) to limit the rate of current rise. However, unlike GTOs, the turn-off protection network is optional and can be omitted if a slightly lower turn-off current capability is acceptable.
Variants of Hitachi Energy IGCTs
Asymmetric IGCT’s
Asymmetric IGCT devices are optimized for snubberless turn-off operation. They are single devices that can be paired with fast recovery diodes from Hitachi Energy’s product portfolio, ensuring efficient power conversion in high-voltage systems.
Reverse conducting IGCT’s
Reverse conducting IGCTs integrate freewheeling diodes monolithically within the device. They are specifically optimized for snubberless turn-off conditions, combining efficiency and compact design in one component.
Reverse blocking ICGT’s
The reverse blocking IGCT is designed for minimal conduction losses and maximum turn-off current capability, providing exceptional efficiency in applications where bidirectional blocking capability is essential.
Schedule a Technical Online Meeting with Peter
At our power electronics company, we offer a comprehensive range of Hitachi Energy IGCTs engineered for superior control, durability, and thermal performance. These high-power IGCTs are widely used in HVDC systems, industrial drives, and renewable energy converters, wherever precise switching and reliable operation are critical. Schedule an online meeting today with our technical experts to learn how Astrolkwx and Hitachi Energy IGCTs can enhance efficiency, reliability, and performance in your next-generation applications.
