The diodes are typically used in combination with IGCTs and GTOs as free-wheeling and clamp diodes, thus enabling full IGCT and GTO performance. Our L-housing fast recovery diodes optimally match press-pack IGBT and IEGT applications where a di/dt of up to 5 kA/µs is required. Contact us for the latest available version.
Fast recovery diode 5SDF 28L4520
Our proven Technology
Hitachi Energy’s comprehensive family of fast recovery diodes is optimized for enhanced Safe Operating Area (SOA) and controlled (soft) turn-off recovery. This makes these diodes very well suited for all converter applications.
Specifications
| Brand | Hitachi Energy |
|---|---|
| Diode type | IGCT diode |
| VRRM (V) | 4500 |
| VDC (V) | 2800 |
| IFAVM TC | 70 °C |
| IFAVm (A) | 2620 |
| IFSM 1 ms TVJM (kA) | N.A. |
| IFSM 10 ms TVJM (kA) | 56.0 |
| VF0 TVJM (V) | 1.10 |
| rF (mΩ) | 0.47 |
| Irr TVJM (A) | 2800 |
| Qrr (µC) | N.A. |
| di-dt max (A/µs) | 1000 |
| TVJM (°C) | 140 |
| RthJC (K/kW) | 6 |
| RthCH (K/kW) | 3 |
| Fm (kN) | 40 |
| Housing | See datasheet |
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Download file: Hitachi Energy Power Semiconductors 2024