MOS-Gated Thyristors are designed for high-power pulse and capacitive discharge applications, switched on by a voltage applied at the gate terminal (MOS structure). Capable of carrying current up to 32kA for a period of 1 microsecond.
IXHX40N150V1HV
Our proven Technology
Specifications
| Weight | 0.006 kg |
|---|---|
| Weight (g) | 6 |
| Voltage (V) | 1500 |
| Current (A) | 7.6 |
| Product line | IGBT DISCRETE |
| Package Type | TO-247 PLUS-HV |
| VDM (V) | |
| ITSM1TC25C (A) | |
| ITSM10TC25C (A) | |
| VT (V) | |
| Slope resistance Thy (mOhm) | |
| Qg (nC) | |
| TriTC25C (ns) | |
| VGK th (V) | |
| Co_packDiode |
Features and benefits
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Download file: IXHX40N150V1HV_datasheet