Utilizing XPT™ thin-wafer technology and 4th generation (GenX4™) Trench IGBT process, these 1200V devices helps to reduced gate driver requirements and conduction losses. It features reduced thermal resistance, low losses, high current densities and low gate charge requirement. A positive collector-to-emitter voltage temperature coefficient enables designers to use multiple devices in parallel. Advantages:
Ideal for high power density and high inrush currents, low loss applications
Hard-switching capable
Easy paralleling of devices
Reduced gate driver requirements
Ease of replacement and availability of isolation package
Low gate drive requirements