Depletion Mode MOSFET DevicesOur N-channel depletion mode field effect transistors (FET) utilize a proprietary third generation vertical DMOS process which realizes world-class, high voltage MOSFET performance in an economical silicon gate process. The vertical DMOS process yields a robust device for high power applications with high input impedance. These highly reliable FET devices have been used extensively in our solid-state relays for industrial and telecommunications applications.
CPC3981ZTR
Our proven Technology
Normally closed with no power applied. Low VGS(off) voltage. High input impedance.
Specifications
| Weight | 0.000082 kg |
|---|---|
| Weight (g) | 0.082 |
| Business Group | IC |
| Product line | SSR ICS |
| BVDSX (V) | 800 |
| RDSon (Ohm) | 45 |
| VGSoff min | -3.1 |
| IDSS Min (mA) | 100 |
| Voltage (V) | 800 |
| Current (mA) | 100 |
Features and benefits
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