Silicon chip on Direct-Copper-Bond substrate. 3rd generation CoolMOS™(1) power MOSFET. Enhanced total power density. Switch mode power supplies. Uninterruptible power supplies. Welding. Inductive heating.
| Weight | 0.006 kg |
|---|---|
| Weight (g) | 6 |
| Fast Intrinsic Rectifier | Low thermal resistance |
| AC and DC Motor Drives | Power factor correction (PFC) |
| Package Type | ISOPLUS247 |
| Business Group | POWER SEMI |
| Product Line | SUPER JUNCTION |
| Cont. Drain Curr. 25C (A) | 38 |
| Drain Source (V) | 600 |
| Gate Charge (nC) | 250 |
| Input Capacitance CISS (pF) | 6800 |
| Isolated Tab RMS (V) | 2500 |
| Max On-Resistance 25C (Ohm) | 0.07 |
| Max Reverse Recovery (ns) | 650 |
| Power Dissipation (W) | 280 |
| Rth (j-c) (K/W) | 0.45 |
| Voltage (V) | 600 |
| Current (A) | 38 |
These Power MOSFETs based on Super Junction technology feature the lowest RDS(on) in 600V-800V class MOSFETs. Internal DCB isolation simplifies assembly and reduces thermal resistance from junction to heat sink. These devices are Avalanche rated, thereby guaranteeing rugged operation.
Advantages:
Easy assembly
Space savings
High power density
(1) CoolMOS™ is a trademark of Infineon Technologies AG.
